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Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Received: 4 January 2016     Accepted: 28 June 2017     Published: 26 July 2017
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Abstract

A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.

Published in International Journal of Materials Science and Applications (Volume 6, Issue 4)
DOI 10.11648/j.ijmsa.20170604.19
Page(s) 223-229
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Copper Cadmium Oxy-Sulphide, Precursor, Metal Organic Chemical Vapor Deposition (MOCVD), Thin Film, Characterization

References
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Cite This Article
  • APA Style

    Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. (2017). Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. International Journal of Materials Science and Applications, 6(4), 223-229. https://doi.org/10.11648/j.ijmsa.20170604.19

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    ACS Style

    Sabur Abiodun Ayinde; Adetokunbo T. Famojuro; Oladepo Fasakin; Bolutife Olofinjana; Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int. J. Mater. Sci. Appl. 2017, 6(4), 223-229. doi: 10.11648/j.ijmsa.20170604.19

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    AMA Style

    Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int J Mater Sci Appl. 2017;6(4):223-229. doi: 10.11648/j.ijmsa.20170604.19

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  • @article{10.11648/j.ijmsa.20170604.19,
      author = {Sabur Abiodun Ayinde and Adetokunbo T. Famojuro and Oladepo Fasakin and Bolutife Olofinjana and Adetayo Victor Adedeji and Moses Sesan Eluyemi and Marcus Adebola Eleruja and Ezekiel Oladele Bolarinwa Ajayi},
      title = {Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique},
      journal = {International Journal of Materials Science and Applications},
      volume = {6},
      number = {4},
      pages = {223-229},
      doi = {10.11648/j.ijmsa.20170604.19},
      url = {https://doi.org/10.11648/j.ijmsa.20170604.19},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170604.19},
      abstract = {A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique
    AU  - Sabur Abiodun Ayinde
    AU  - Adetokunbo T. Famojuro
    AU  - Oladepo Fasakin
    AU  - Bolutife Olofinjana
    AU  - Adetayo Victor Adedeji
    AU  - Moses Sesan Eluyemi
    AU  - Marcus Adebola Eleruja
    AU  - Ezekiel Oladele Bolarinwa Ajayi
    Y1  - 2017/07/26
    PY  - 2017
    N1  - https://doi.org/10.11648/j.ijmsa.20170604.19
    DO  - 10.11648/j.ijmsa.20170604.19
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 223
    EP  - 229
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20170604.19
    AB  - A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
    VL  - 6
    IS  - 4
    ER  - 

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Author Information
  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Chemistry and Physics, Elizabeth City State University, Elizabeth City, NC, USA

  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

  • Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

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