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The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching

Received: 14 July 2016     Published: 15 July 2016
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Abstract

The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.

Published in International Journal of Materials Science and Applications (Volume 5, Issue 3)
DOI 10.11648/j.ijmsa.20160503.18
Page(s) 164-168
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Metal-Assisted Chemical Etching, Silicon Nanowires, SEM

References
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[4] Zhang Y F Tang, Y H [4], N Wang, nanowires prepared by laser ablation at high temperature [J]. Appl Phys Lett et a1. Silicon, 1998, 72 (15): 1835-1837.
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[6] Li X Bohn, P W. Metal-Assited chemical in etching HF/H2O2 produces porous silicon [J]. Appl Phys Lett [6], 2000, 77: 2572-2574.
[7] Splinter et, al. Novel porous silicon formation [7] A. technology using internal current generation Mat, Sci E C, 15 (1-2), 2001, 109-112 PP.
[8] Canham L T. Silicon [8] quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl Phys Lett, 1990, 57: 1046.
[9] Yang Lijiao, Wang Jinliang, Yang Chengtao such as. Silicon nanowire light induced luminescence mechanism and research progress of materials [J]. Herald, 2012, 26 (21): 135-141
[10] Bai Z G Yu D P Wang J J etal. Synthesis and photoluminescence properties of semiconductor nanowires [J]. Master Sci Eng B 2000, 72: 117-120 [10].
[11] Li Changqing, Zhou Tingting, Mei Xinli, Morningstar. Chemical etching step method preparing silicon nanowires (English) [J]. Materials science and engineering of 2013 (04).
[12] Yao Rihui, Chen Ziming, impacts, Ying Cong Chen, Chen Jin Qiao. Metal catalyzed chemical etching method for preparing silicon nanowire materials [J]. Herald, 2013, 23: 1-6.
[13] Liu Li, Cao Yang, He Junhui, Yang Qiaowen. Preparation of silicon nanowire arrays and their applications in [J]. chemistry, 2013, Z1: 248-259.
[14] Zhou Yang. Study on Preparation of silicon nanowires by chemical etching [D]. Dalian University of Technology, 2011.
[15] Zhao Meihong. Preparation and optical properties of silicon nano materials [D]. Capital Normal University, 2007.
[16] Yao Rihui, Chen Ziming, impacts, Ying Cong Chen, Chen Jin Qiao. Metal catalyzed chemical etching method for preparing silicon nanowire materials [J]. Herald, 2013, 23: 1-6.
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Cite This Article
  • APA Style

    Lu Xiaoci, Li Changqing, Ding Gangjian. (2016). The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. International Journal of Materials Science and Applications, 5(3), 164-168. https://doi.org/10.11648/j.ijmsa.20160503.18

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    ACS Style

    Lu Xiaoci; Li Changqing; Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int. J. Mater. Sci. Appl. 2016, 5(3), 164-168. doi: 10.11648/j.ijmsa.20160503.18

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    AMA Style

    Lu Xiaoci, Li Changqing, Ding Gangjian. The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching. Int J Mater Sci Appl. 2016;5(3):164-168. doi: 10.11648/j.ijmsa.20160503.18

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  • @article{10.11648/j.ijmsa.20160503.18,
      author = {Lu Xiaoci and Li Changqing and Ding Gangjian},
      title = {The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching},
      journal = {International Journal of Materials Science and Applications},
      volume = {5},
      number = {3},
      pages = {164-168},
      doi = {10.11648/j.ijmsa.20160503.18},
      url = {https://doi.org/10.11648/j.ijmsa.20160503.18},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160503.18},
      abstract = {The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - The Preparation of Silicon Nanowires Using Metal-Assisted Chemical Etching
    AU  - Lu Xiaoci
    AU  - Li Changqing
    AU  - Ding Gangjian
    Y1  - 2016/07/15
    PY  - 2016
    N1  - https://doi.org/10.11648/j.ijmsa.20160503.18
    DO  - 10.11648/j.ijmsa.20160503.18
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 164
    EP  - 168
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20160503.18
    AB  - The preparation of silicon nanowires by metal catalytic chemical etching has the advantages of low cost and simple operation. This study attempts to use a silver-assisted chemical etching to prepare silicon nanowires. In the process of experiment we change the corrosive liquid concentration of corrosion and corrosion time to compare these factors on the surface topography of silicon nanowires in the preparation. The experimental results were observed by optical microscope and electron microscope. The experiment shows that in the process of etching, etching time of CLSM has had a huge impact, if etching time is short, the sample cannot generate silicon nanowires, while a long etching time will cause silicon erode up, finally dissolved in the etching liquid. The wafer surface surface morphology of honeycomb like, and the result shows that when the corrosive liquid concentration is 0.02mol/L and the corrosive time is four works better, formed the length 100-200nm and the line diameter 100μm and more uniform silicon nanowires.
    VL  - 5
    IS  - 3
    ER  - 

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Author Information
  • School of Information Engineering, Zhengzhou University, Zhengzhou, China

  • School of Information Engineering, Zhengzhou University, Zhengzhou, China

  • School of Information Engineering, Zhengzhou University, Zhengzhou, China

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